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19982024
most citedHidden Unit Specialization in Layered Neural Networks: ReLU vs. Sigmoidal Activation

68 citations · 302 across the 26 of their papers we have counts for

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Showing cond-mat.stat-mechShow all

7 papers · 1 filter

cond-mat.stat-mech2004★ 1 cited

Off-lattice Kinetic Monte Carlo simulations of strained heteroepitaxial growth

Michael Biehl, Florian Much, Christian Vey

An off-lattice, continuous space Kinetic Monte Carlo (KMC) algorithm is discussed and applied in the investigation of strained heteroepitaxial crystal growth. As a starting point,…

cond-mat.stat-mech2001★ 8 cited

Flat (001) surfaces of II-VI semiconductors: A lattice gas model

M. Ahr, M. Biehl

We present a two-dimensional lattice gas with anisotropic interactions which model the known properties of the surface reconstructions of CdTe and ZnSe. In constrast to an earlier…

cond-mat.stat-mech2001★ 3 cited

Particle currents and the distribution of terrace sizes in unstable epitaxial growth

M. Biehl, M. Ahr, M. Kinne +2

A solid-on-solid model of epitaxial growth in 1+1 dimensions is investigated in which slope dependent upward and downward particle currents compete on the surface. The microscopic…

cond-mat.stat-mech2000★ 6 cited

Modelling sublimation and atomic layer epitaxy in the presence of competing surface reconstructions

M. Ahr, M. Biehl

We present a solid-on-solid model of a binary AB compound, where atoms of type A in the topmost layer interact via anisotropic interactions different from those inside the bulk. De…

cond-mat.stat-mech2000★ 10 cited

A lattice gas model of II-VI(001) semiconductor surfaces

Michael Biehl, Martin Ahr, Wolfgang Kinzel +2

We introduce an anisotropic two-dimensional lattice gas model of metal terminated II-IV(001) seminconductor surfaces. Important properties of this class of materials are represente…

cond-mat.stat-mech1999★ 18 cited

Unconventional MBE Strategies from Computer Simulations for Optimized Growth Conditions

S. Schinzer, M. Sokolowski, M. Biehl +1

We investigate the influence of step edge diffusion (SED) and desorption on Molecular Beam Epitaxy (MBE) using kinetic Monte-Carlo simulations of the solid-on-solid (SOS) model. Ba…

cond-mat.stat-mech1998★ 23 cited

The role of step edge diffusion in epitaxial crystal growth

S. Schinzer, M. Kinne, M. Biehl +1

The role of step edge diffusion (SED) in epitaxial growth is investigated. To this end we revisit and extend a recently introduced simple cubic solid-on-solid model, which exhibits…