26 citations · 101 across the 12 of their papers we have counts for
12 papers
Toward Mass-Production of Transition Metal Dichalcogenide Solar Cells: Scalable Growth of Photovoltaic-Grade Multilayer WSe2 by Tungsten Selenization
Kathryn M. Neilson, Sarallah Hamtaei, Koosha Nassiri Nazif +11
Semiconducting transition metal dichalcogenides (TMDs) are promising for high-specific-power photovoltaics due to desirable band gaps, high absorption coefficients, and ideally dan…
Relevance of Ge incorporation to control the physical behaviour of point defects in kesterite
Thomas Ratz, Ngoc Duy Nguyen, Guy Brammertz +2
To reduce the prominent VOC-deficit that limits kesterite-based solar cells efficiencies, Ge has been proposed over the recent years with encouraging results, as the reduction of t…
Opto-electronic properties and solar cell efficiency modelling of CuZnXS (X=Sn,Ge,Si) kesterites
Thomas Ratz, Jean-Yves Raty, Guy Brammertz +2
In this work, first principle calculations of CuZnSnS (CZTS), CuZnGeS (CZGS) and CuZnSiS (CZSS) are performed to highlight the impact of the cationic substi…
Selective Epitaxial Growth of GaAs on Ge Substrates with a SiO2 Pattern
G. Brammertz, M. Caymax, Y. Mols +6
We have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO2 mask layer. The selectively grown structures have lateral sizes ranging from…
Selective epitaxial growth of GaAs on Ge by MOCVD
Guy Brammertz, Yves Mols, Stefan Degroote +4
We have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO2 mask layer. The selectively grown structures have lateral sizes ranging from…
Low temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates
Guy Brammertz, Yves Mols, Stefan Degroote +4
Thin epitaxial GaAs films, with thickness varying from 140 to 1000 nm and different Si doping levels, were grown at 650C by organometallic vapor phase epitaxy (OMVPE) on Ge substra…