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19942022
most citedInterlayer coupling in ferromagnetic semiconductor superlattices

266 citations · 1.4k across the 61 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

6 papers · 1 filter

cond-mat.mes-hall2022★ 5 cited

Evolution of domain structure with electron doping in ferroelectric thin films

W. A. Atkinson

To minimize their electrostatic energy, insulating ferroelectric films tend to break up into nanoscale ``Kittel'' domains of opposite polarization that are separated by uncharged 1…

cond-mat.mes-hall2021★ 4 cited

Mechanism for Switchability in Electron-Doped Ferroelectric Interfaces

Kelsey S. Chapman, W. A. Atkinson

With the recent experimental verification that ferroelectric lattice distortions survive in the metallic phase of some materials, there is a desire to create devices that are both…

cond-mat.mes-hall2019★ 3 cited

Modified transverse Ising model for the dielectric properties of SrTiO films and interfaces

Kelsey S. Chapman, W. A. Atkinson

The transverse Ising model (TIM), with pseudospins representing the lattice polarization, is often used as a simple description of ferroelectric materials. However, we demonstrate…

cond-mat.mes-hall2018★ 8 cited

Possible Flexoelectric Origin of the Lifshitz Transition in LaAlO/SrTiO Interfaces

Amany Raslan, W. A. Atkinson

Multiple experiments have observed a sharp transition in the band structure of LaAlO/SrTiO (001) interfaces as a function of applied gate voltage. This Lifshitz transition,…

cond-mat.mes-hall2003★ 87 cited

Magnetization relaxation in (Ga,Mn)As ferromagnetic semiconductors

Jairo Sinova, T. Jungwirth, X. Liu +4

We describe a theory of Mn local-moment magnetization relaxation due to p-d kinetic-exchange coupling with the itinerant-spin subsystem in the ferromagnetic semiconductor (Ga,Mn)As…

cond-mat.mes-hall1998★ 266 cited

Interlayer coupling in ferromagnetic semiconductor superlattices

T. Jungwirth, W. A. Atkinson, B. H. Lee +1

We develop a mean-field theory of carrier-induced ferromagnetism in diluted magnetic semiconductors. Our approach represents an improvement over standard RKKY model allowing spatia…