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cond-mat.mtrl-sci2005
Heat capacity of -GaN: Isotope Effects
R. K. Kremer, M. Cardona, E. Schmitt +7
Until recently, the heat capacity of GaN had only been measured for polycrystalline powder samples. Semiempirical as well as \textit{first-principles} calculations have appeared wi…
cond-mat.mtrl-sci2004
Surface and electronic structure of MOCVD-grown Ga(0.92)In(0.08)N investigated by UV and X-ray photoelectron spectroscopies
B. J. Kowalski, I. A. Kowalik, R. J. Iwanowski +10
The surface and electronic structure of MOCVD-grown layers of Ga(0.92)In(0.08)N have been investigated by means of photoemission. An additional feature at the valence band edge, wh…
cond-mat.mtrl-sci2004
MnAs overlayer on GaN(0001)-(1x1) - its growth, morphology and electronic structure
B. J. Kowalski, I. A. Kowalik, R. J. Iwanowski +5
Spontaneous formation of grains has been observed for the MnAs layer grown by means of MBE on the GaN(0001)-(1x1) surface. Electronic structure of the system was investigated in si…