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cond-mat.mtrl-sci2011
Realization of the Switching Mechanism in Resistance Random Access Memory (RRAMTM) Devices: Structural and Electronic Properties Affecting Electron Conductivity in Halfnium Oxide-Electrode System through First Principles Calculations
Susan Meñez Aspera, Hideaki Kasai, Hirofumi Kishi +3
Resistance Random Access Memory (RRAMTM) device, with its electrically induced nanoscale resistive switching capacity, has been gaining considerable attention as future non-volatil…
cond-mat.mtrl-sci2011★ 2 cited
Critical Crossover Between Yosida-Kondo Dominant Regime and Magnetic Frustration Dominant Regime in the System of a Magnetic Trimer on a Metal Surface
Nghiem Thi Minh Hoa, Wilson Agerico Diño, Hideaki Kasai
Quantum Monte Carlo simulations were carried out for the system of a magnetic trimer on a metal surface. The magnetic trimer is arranged in two geometric configurations, viz., isos…