1 citations · 1 across the 1 of their papers we have counts for
1 paper
Ikuo Kurachi, Kazuo Kobayashi, Hiroki Kasai +5
X-ray radiation hardness of FD-SOI n- and p-MOSFET has been investigated. After 1.4 kGy(Si) irradiation, 15% drain current increase for n-MOSFET and 20% drain current decrease for…