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physics.ins-det2015
Lapis SOI Pixel Process
Masao Okihara, Hiroki Kasai, Noriyuki Miura +2
0.2 um fully-depleted SOI technology has been developed a for X-ray pixel detectors. To improve the detector performance, some advanced process technologies are developing continuo…
physics.ins-det2015★ 1 cited
X-ray Radiation Hardness of Fully-Depleted SOI MOSFETs and Its Improvement
Ikuo Kurachi, Kazuo Kobayashi, Hiroki Kasai +5
X-ray radiation hardness of FD-SOI n- and p-MOSFET has been investigated. After 1.4 kGy(Si) irradiation, 15% drain current increase for n-MOSFET and 20% drain current decrease for…