482 citations · 2.4k across the 38 of their papers we have counts for
14 papers · 1 filter
Influence of Structural Defects on Charge Density Waves in 1T-TaS2
I. Lutsyk, K. Szalowski, P. Krukowski +22
The influence of intrinsic defects of 1T-TaS2 on charge density waves (CDW) is studied using scanning tunneling microscopy and spectroscopy (STM, STS), angle-resolved photoelectron…
Double band inversion in the topological phase transition of Ge1-xSnx alloys
Rui Tan, Qirui Yang, Ruiyuan Chen +5
We use first-principles simulation and virtual crystal approximation to reveal the unique double band inversion and topological phase transition in Ge1-xSnx alloys. Wavefunction pa…
Observation of a Smoothly Tunable Dirac Point in
Sean Howard, Arjun Raghavan, Davide Iaia +9
State-of-the-art topological devices require the use topological surface states to drive electronic transport. In this study, we examine a tunable topological system, $Ge(Bi_{x}Sb_…
Symmetry-breaking and spin-blockage effects on carrier dynamics in single-layer tungsten diselenide
Ro-Ya Liu, Meng-Kai Lin, Peng Chen +10
Understanding carrier creation and evolution in materials initiated by pulsed optical excitation is central to developing ultrafast optoelectronics. We demonstrate herein that the…
Comment on "Chiral Phase Transition in Charge Ordered 1T-TiSe2" and Supplementary Material on "First-order Forbidden X-ray Diffraction"
Meng-Kai Lin, Joseph A. Hlevyack, Peng Chen +2
A prior report of the emergence of chirality for the (2x2x2) charge density wave (CDW) in TiSe2 has attracted much interest; the drastic symmetry breaking is highly unusual with fe…
In-situ strain tuning of the Dirac surface states in Bi2Se3 films
David Floetotto, Yang Bai, Yang-Hao Chan +12
Elastic strain has the potential for a controlled manipulation of the band gap and spin-polarized Dirac states of topological materials, which can lead to pseudo-magnetic-field eff…
Gapped Electronic Structure of Epitaxial Stanene on InSb(111)
Cai-Zhi Xu, Yang-Hao Chan, Peng Chen +7
Stanene (single-layer grey tin), with an electronic structure akin to that of graphene but exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature…
Band Topology and Dichroic Signature of Bismuth
Guang Bian, Tay-Rong Chang, Xiaoxiong Wang +3
Bismuth has been the key element in the discovery and development of topological insulator materials. Previous theoretical studies indicated that Bi is topologically trivial and it…
Engineering Multiple Topological Phases in Nanoscale Van der Waals Heterostructures: Realisation of -Antimonene
Tobias Märkl, Pawel J. Kowalczyk, Maxime Le Ster +7
Van der Waals heterostructures have recently been identified as providing many opportunities to create new two-dimensional materials, and in particular to produce materials with to…
Elemental topological Dirac semimetal: α-Sn on InSb(111)
Cai-Zhi Xu, Yang-Hao Chan, Yige Chen +12
Three-dimensional (3D) topological Dirac semimetals (TDSs) are rare but important as a versatile platform for exploring exotic electronic properties and topological phase transitio…
Dirac fermions in borophene
Baojie Feng, Osamu Sugino, Ro-Ya Liu +14
Honeycomb structures of group IV elements can host massless Dirac fermions with non-trivial Berry phases. Their potential for electronic applications has attracted great interest a…
Discovery of two-dimensional Dirac nodal line fermions in monolayer Cu2Si
Baojie Feng, Botao Fu, Shusuke Kasamatsu +18
Topological nodal line semimetals, a novel quantum state of materials, possess topologically nontrivial valence and conduction bands that touch at a line near the Fermi level. The…
Spin Texture in Type-II Weyl Semimetal WTe2
Baojie Feng, Yang-Hao Chan, Ya Feng +15
We determine the band structure and spin texture of WTe2 by spin- and angle-resolved photoemission spectroscopy (SARPES). With the support of first-principles calculations, we reve…
Proving Nontrivial Topology of Pure Bismuth by Quantum Confinement
S. Ito, B. Feng, M. Arita +13
The topology of pure Bi is controversial because of its very small (10 meV) band gap. Here we perform high-resolution angle-resolved photoelectron spectroscopy measurements s…