62 citations · 412 across the 31 of their papers we have counts for
Showing 2019Show all
3 papers · 1 filter
physics.app-ph2019★ 9 cited
Investigation of gating effect in Si spin MOSFET
Soobeom Lee, Fabien Rortais, Ryo Ohshima +6
A gate voltage application in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) modulates spin accumulation voltages, where both electrical conductivi…
physics.app-ph2019★ 8 cited
Gate-tunable spin exclusive or operation in a silicon-based spin device at room temperature
R. Ishihara, Y. Ando, S. Lee +5
Room temperature operation of a spin exclusive or (XOR) gate was demonstrated in lateral spin valve devices with nondegenerate silicon (Si) channels. The spin XOR gate is a fundame…
physics.app-ph2019★ 19 cited
Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts
Sachin Gupta, F. Rortais, R. Ohshima +4
Two-dimensional MoS2 has emerged as promising material for nanoelectronics and spintronics due to its exotic properties. However, high contact resistance at metal semiconductor MoS…