activity
20142026
most citedStrong evidence for d-electron spin transport at room temperature at a LaAlO3/SrTiO3 interface

62 citations · 412 across the 31 of their papers we have counts for

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Showing 2018Show all

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cond-mat.mtrl-sci2018★ 14 cited

Quantitative and systematic analysis of bias dependence of spin accumulation voltage in a non-degenerate Si spin valve

Soobeom Lee, Fabien Rortais, Ryo Ohshima +5

Spin accumulation voltages in a non-degenerate Si spin valve are discussed quantitatively as a function of electric bias current using systematic experiments and model calculations…