62 citations · 412 across the 31 of their papers we have counts for
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Over 1% magnetoresistance ratio at room temperature in non-degenerate silicon-based lateral spin valves
H. Koike, S. Lee, R. Ohshima +7
To augment the magnetoresistance (MR) ratio of n-type non-degenerate Si-based lateral spin valves (Si-LSVs), we modify the doping profile in the Si layer and introduce a larger loc…
Spin transport in a lateral spin valve with a suspended Cu channel
Kenjiro Matsuki, Ryo Ohshima, Livio Leiva +4
We study spin transport through a suspended Cu channel by an electrical non-local 4-terminal measurement for future spin mechanics applications. A magnetoresistance due to spin tra…
Investigation of gating effect in Si spin MOSFET
Soobeom Lee, Fabien Rortais, Ryo Ohshima +6
A gate voltage application in a Si-based spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) modulates spin accumulation voltages, where both electrical conductivi…
Gate-tunable spin exclusive or operation in a silicon-based spin device at room temperature
R. Ishihara, Y. Ando, S. Lee +5
Room temperature operation of a spin exclusive or (XOR) gate was demonstrated in lateral spin valve devices with nondegenerate silicon (Si) channels. The spin XOR gate is a fundame…
Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts
Sachin Gupta, F. Rortais, R. Ohshima +4
Two-dimensional MoS2 has emerged as promising material for nanoelectronics and spintronics due to its exotic properties. However, high contact resistance at metal semiconductor MoS…