18 citations · 76 across the 14 of their papers we have counts for
8 papers · 1 filter
High-cooperativity coupling and spin-resolved extinction of tin-vacancy centers in a diamond-like microcavity
Kerim Köster, András Laukó, Federico Rapisarda +16
The tin-vacancy (SnV) center in diamond is a promising spin-photon interface for quantum networks, combining favorable optical properties with spin coherence above 1K. Unfolding th…
Revealing and reducing growth-induced interfacial disorder in preferentially aligned nitrogen-vacancy centers in diamond
Cheng-I Ho, Marina Davydova, Patrik Straňák +4
Nitrogen-vacancy (NV) centers in chemical-vapor-deposition (CVD) diamond can form preferentially oriented ensembles with high sensing performance and low densities of lattice defec…
Deformation-Driven Enhancement of Spin Defect Emission in Hexagonal Boron Nitride
Jianpei Geng, Xuankai Zhou, Nils Gross +11
The negatively charged boron vacancy (VB-) in hexagonal boron nitride (hBN) has been extensively investigated as it offers a novel playground for two-dimensional quantum sensing, w…
Cavity enhancement of V2 centers in 4H-SiC with a fiber-based Fabry-Pérot microcavity
Jannis Hessenauer, Jonathan Körber, Misagh Ghezellou +5
Silicon vacancy centers in 4H-silicon carbide (SiC) host a long-lived electronic spin and simultaneously possess spin-resolved optical transitions, making them a great candidate fo…
Two-Photon Interference of Photons from Remote Tin-Vacancy Centers in Diamond
Vladislav Bushmakin, Oliver von Berg, Colin Sauerzapf +8
Scalable quantum networks rely on optical connections between long-lived qubits to distribute entanglement. Tin vacancies in diamond have emerged as promising long-lived qubits, of…
Single V2 defect in 4H Silicon Carbide Schottky diode at low temperature
Timo Steidl, Pierre Kuna, Erik Hesselmeier-Hüttmann +10
Nanoelectrical and photonic integration of quantum optical components is crucial for scalable solid-state quantum technologies. Silicon carbide stands out as a material with mature…
Spectral stability of V2 centres in sub-micron 4H-SiC membranes
Jonah Heiler, Jonathan Körber, Erik Hesselmeier +9
Colour centres in silicon carbide emerge as a promising semiconductor quantum technology platform with excellent spin-optical coherences.However, recent efforts towards maximising…
Dopant-assisted stabilization of negatively charged single nitrogen-vacancy centers in phosphorus-doped diamond at low temperatures
Jianpei Geng, Tetyana Shalomayeva, Mariia Gryzlova +9
Charge state instabilities have been a bottleneck for the implementation of solid-state spin systems and pose a major challenge to the development of spin-based quantum technologie…