activity
20172019
most citedMillimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance

43 citations · 43 across the 2 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2019

The valley Nernst effect in WSe

Minh-Tuan Dau, Céline Vergnaud, Alain Marty +9

The Hall effect can be extended by inducing a temperature gradient in lieu of electric field that is known as the Nernst (-Ettingshausen) effect. The recently discovered spin Nerns…

cond-mat.mtrl-sci2019

Van der Waals epitaxy of Mn-doped MoSe on mica

M. T. Dau, C. Vergnaud, M. Gay +8

The magnetic order associated with the degree of freedom of spin in two-dimensional (2D) materials is subjected to intense investigation because of its potential application in 2D…

cond-mat.mtrl-sci2018

Magnetotransport in BiSe thin films epitaxially grown on Ge(111)

T. Guillet, A. Marty, C. Beigné +6

Topological insulators (TIs) like BiSe are a class of material with topologically protected surface states in which spin-momentum locking may enable spin-polarized and defe…

cond-mat.mtrl-sci2018

Tuning spin-charge interconversion with quantum confinement in ultrathin Bi/Ge(111) films

C. Zucchetti, M. -T Dau, F. Bottegoni +16

Spin-charge interconversion (SCI) phenomena have attracted a growing interest in the field of spintronics as means to detect spin currents or manipulate the magnetization of ferrom…

cond-mat.mtrl-sci201743 cited

Millimeter-scale layered MoSe2 grown on sapphire and evidence for negative magnetoresistance

M. T. Dau, C. Vergnaud, A. Marty +10

Molecular beam epitaxy technique has been used to deposit a single layer and a bilayer of MoSe 2 on sapphire. Extensive characterizations including in-situ and ex-situ measurements…