3 papers
physics.app-ph2019
Gallium Nitride FET Model
G. I. Zebrev, V. V. Orlov
We have presented an analytical physics-based compact model of GaN power FET, which can accurately describe the I-V characteristics in all operation modes. The model considers the…
cond-mat.mes-hall2017
Physics-Based Modeling of TID Induced Global Static Leakage in Different CMOS Circuits
Gennady I. Zebrev, Vasily V. Orlov, Maxim S. Gorbunov +1
Compact modeling of inter-device radiation-induced leakage underneath the gateless thick STI oxide is presented and validated taking into account CMOS technology and hardness param…
cond-mat.mes-hall2017
Compact Modeling of MOSFET I-V Characteristics and Simulation of Dose-Dependent Drain Currents
G. I. Zebrev, V. V. Orlov, A. S. Bakerenkov +1
We have presented a compact MOSFET model, which allows us to describe the I-V characteristics of irradiated long-channel and short-channel transistors in all operation modes at dif…