activity
20142019
most citedRaman Spectroscopy of Electrochemically-Gated Graphene Transistors: Geometrical Capacitance, Electron-Phonon, Electron-Electron, and Electron-Defect Scattering

196 citations · 1.3k across the 15 of their papers we have counts for

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Showing 2015Show all

4 papers · 1 filter

cond-mat.mes-hall2015★ 174 cited

Splitting of interlayer shear modes and photon energy dependent anisotropic Raman response in -layer ReSe and ReS

Etienne Lorchat, Guillaume Froehlicher, Stéphane Berciaud

We investigate the interlayer phonon modes in -layer rhenium diselenide (ReSe) and rhenium disulfide (ReS) by means of ultralow-frequency micro-Raman spectroscopy. These…

cond-mat.mes-hall2015★ 139 cited

Unified description of the optical phonon modes in -layer MoTe

Guillaume Froehlicher, Etienne Lorchat, François Fernique +4

-layer transition metal dichalcogenides provide a unique platform to investigate the evolution of the physical properties between the bulk (three dimensional) and monolayer (qua…

cond-mat.mes-hall2015★ 196 cited

Raman Spectroscopy of Electrochemically-Gated Graphene Transistors: Geometrical Capacitance, Electron-Phonon, Electron-Electron, and Electron-Defect Scattering

Guillaume Froehlicher, Stéphane Berciaud

We report a comprehensive micro-Raman scattering study of electrochemically-gated graphene field-effect transistors. The geometrical capacitance of the electrochemical top-gates is…

cond-mat.mes-hall2015★ 98 cited

Distance Dependence of the Energy Transfer Rate From a Single Semiconductor Nanostructure to Graphene

François Federspiel, Guillaume Froehlicher, Michel Nasilowski +9

The near-field Coulomb interaction between a nano-emitter and a graphene monolayer results in strong Förster-type resonant energy transfer and subsequent fluorescence quenching. He…