Interfacial energy barrier height of Al${}_2$O${}_3$/H-terminated (111) diamond heterointerface investigated by X-ray photoelectron spectroscopy

Aurélien Maréchal, Yukako Kato, Meiyong Liao +1

The interfacial band configuration of the high-k dielectric Al${}_2$O${}_3$ deposited at 120°C by atomic layer deposition (ALD) on boron- and phosphorus-doped hydrogen-terminated (111)…