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Oxygen migration during resistance switching and failure of hafnium oxide memristors
Suhas Kumar, Ziwen Wang, Xiaopeng Huang +7
While the recent establishment of the role of thermophoresis/diffusion-driven oxygen migration during resistance switching in metal oxide memristors provided critical insights requ…
Spatially uniform resistance switching of low current, high endurance titanium-niobium-oxide memristors
Suhas Kumar, Noraica Davila, Ziwen Wang +6
We analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (<3 μW) and energy (<200 fJ/bit/μm2), low read-power (~nW), and high endur…
Conduction Channel Formation and Dissolution Due to Oxygen Thermophoresis/Diffusion in Hafnium Oxide Memristors
Suhas Kumar, Ziwen Wang, Xiaopeng Huang +7
Transition metal oxide memristors, or resistive random-access memory (RRAM) switches, are under intense development for storage-class memory because of their favorable operating po…
Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors
Suhas Kumar, Catherine E. Graves, John Paul Strachan +6
Oxygen migration in tantalum oxide, a promising next-generation storage material, is studied using in-operando x-ray absorption spectromicroscopy and is used to microphysically des…
Local Temperature Redistribution and Structural Transition During Joule-Heating-Driven Conductance Switching in VO2
Suhas Kumar, Matthew D. Pickett, John Paul Strachan +3
Joule-heating induced conductance-switching is studied in VO2, a Mott insulator. Complementary in-situ techniques including optical characterization, blackbody microscopy, scanning…
In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors
Suhas Kumar, Catherine E. Graves, John Paul Strachan +4
Memristors are receiving keen interest because of their potential varied applications and promising large-scale information storage capabilities. Tantalum oxide is a memristive mat…