127 citations · 208 across the 2 of their papers we have counts for
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cond-mat.mtrl-sci2017★ 81 cited
Oxygen migration during resistance switching and failure of hafnium oxide memristors
Suhas Kumar, Ziwen Wang, Xiaopeng Huang +7
While the recent establishment of the role of thermophoresis/diffusion-driven oxygen migration during resistance switching in metal oxide memristors provided critical insights requ…
cond-mat.mtrl-sci2017★ 127 cited
Conduction Channel Formation and Dissolution Due to Oxygen Thermophoresis/Diffusion in Hafnium Oxide Memristors
Suhas Kumar, Ziwen Wang, Xiaopeng Huang +7
Transition metal oxide memristors, or resistive random-access memory (RRAM) switches, are under intense development for storage-class memory because of their favorable operating po…