48 citations · 240 across the 20 of their papers we have counts for
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Physical Mechanism behind the Hysteresis-free Negative Capacitance Effect in Metal-Ferroelectric-Insulator-Metal Capacitors with Dielectric Leakage and Interfacial Trapped Charges
Chia-Sheng Hsu, Sou-Chi Chang, Dmitri E. Nikonov +2
The negative capacitance (NC) stabilization of a ferroelectric (FE) material can potentially provide an alternative way to further reduce the power consumption in ultra-scaled devi…
Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory
Xiang Li, Shy-Jay Lin, Mahendra DC +5
As spin-orbit-torque magnetic random-access memory (SOT-MRAM) is gathering great interest as the next-generation low-power and high-speed on-chip cache memory applications, it is c…
A micromagnetic study of the switching dynamics of the BiFeO/CoFe heterojunction
Yu-Ching Liao, Dmitri E. Nikonov, Sourav Dutta +4
The switching dynamics of a single-domain BiFeO3/CoFe heterojunction is modeled and key parameters such as interface exchange coupling coefficient are extracted from experimental r…