activity
20152018
most citedIntrinsic electron mobility exceeding 1000 cm/Vs in multilayer InSe FETs

440 citations · 674 across the 5 of their papers we have counts for

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Showing 2017Show all

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cond-mat.mes-hall2017★ 27 cited

Anisotropic electrical resistance in mesoscopic LaAlO/SrTiO devices with individual domain walls

Nicholas J. Goble, Richard Akrobetu, Hicham Zaid +4

The crystal structure of bulk SrTiO(STO) transitions from cubic to tetragonal at around 105K. Recent local scanning probe measurements of LaAlO/SrTiO (LAO/STO) interfac…