activity
20152018
most citedIntrinsic electron mobility exceeding 1000 cm/Vs in multilayer InSe FETs

440 citations · 674 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2018★ 72 cited

Tuning Rashba Spin-Orbit Coupling in Gated Multilayer InSe

Kasun Premasiri, Santosh Kumar Radha, Sukrit Sucharitakul +5

Manipulating the electron spin with the aid of spin-orbit coupling (SOC) is an indispensable element of spintronics. Electrostatically gating a material with strong SOC results in…

cond-mat.mes-hall2017★ 27 cited

Anisotropic electrical resistance in mesoscopic LaAlO/SrTiO devices with individual domain walls

Nicholas J. Goble, Richard Akrobetu, Hicham Zaid +4

The crystal structure of bulk SrTiO(STO) transitions from cubic to tetragonal at around 105K. Recent local scanning probe measurements of LaAlO/SrTiO (LAO/STO) interfac…

cond-mat.mtrl-sci2016★ 62 cited

Imaging the Long Transport Lengths of Photo-generated Carriers in Oriented Perovskite Films

Shuhao Liu, Lili Wang, Wei-Chun Lin +3

Organometal halide perovskite has emerged as a promising material for solar cells and optoelectronics. Although the long diffusion length of photo-generated carriers is believed to…

cond-mat.mes-hall2016★ 73 cited

Screening limited switching performance of multilayer 2D semiconductor FETs: the case for SnS

Sukrit Sucharitakul, Rajesh Kumar Ulaganathan, Raman Sankar +6

Gate tunable p-type multilayer tin mono-sulfide (SnS) field-effect transistor (FET) devices with SnS thickness between 50 and 100 nm were fabricated and studied to understand their…

cond-mat.mes-hall2015★ 440 cited

Intrinsic electron mobility exceeding 1000 cm/Vs in multilayer InSe FETs

Sukrit Sucharitakul, Nicholas J. Goble, U. Rajesh Kumar +5

Graphene-like two-dimensional (2D) materials, not only are interesting for their exotic electronic structure and fundamental electronic transport or optical properties but also, ho…