14 citations · 33 across the 7 of their papers we have counts for
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Current-induced magnetization reversal in (Ga,Mn)(Bi,As) epitaxial layer with perpendicular magnetic anisotropy
Tomasz Andrearczyk, Janusz Sadowski, Krzysztof Dybko +2
Pulsed current-induced magnetization reversal is investigated in the layer of (Ga,Mn)(Bi,As) dilute ferromagnetic semiconductor (DFS) epitaxially grown under tensile misfit strain…
Novel Quaternary Dilute Magnetic Semiconductor (Ga,Mn)(Bi,As): Magnetic and Magneto-Transport Investigations
K. Levchenko, T. Andrearczyk, J. Z. Domagala +6
Magnetic and magneto-transport properties of thin layers of the (Ga,Mn)(Bi,As) quaternary dilute magnetic semiconductor grown by the low-temperature molecular-beam epitaxy techniqu…
Effect of Misfit Strain in (Ga,Mn)(Bi,As) Epitaxial Layers on their Magnetic and Magneto-Transport Properties
K. Levchenko, T. Andrearczyk, J. Z. Domagala +5
Effect of misfit strain in the layers of (Ga,Mn)(Bi,As) quaternary diluted magnetic semiconductor, epitaxially grown on either GaAs substrate or (In,Ga)As buffer, on their magnetic…
Magnetic and magneto-transport characterization of (Ga,Mn)(Bi,As) epitaxial layers
K. Levchenko, T. Andrearczyk, J. Z. Domagala +3
High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Bi incorporation i…
Magneto-resistive memory in ferromagnetic (Ga,Mn)As nanostructures
T. Figielski, T. Wosinski, A. Morawski +3
We show a novel magneto-resistive effect that appears in lithographically shaped, three-arm nanostructure, fabricated from ferromagnetic (Ga,Mn)As layers. The effect, related to a…
Magnetotransport and Domain Wall in Nanoconstriction of Ferromagnetic Semiconductor (Ga,Mn)As
T. Figielski, T. Wosinski, O. Pelya +6
We studied magnetoresistance (MR) of nanoconstrictions created in (Ga,Mn)As epilayers by O+ ion implantation. Original layers exhibit a negative MR that is plausibly caused by weak…