Magneto-resistive memory in ferromagnetic (Ga,Mn)As nanostructures

Abstract

We show a novel magneto-resistive effect that appears in lithographically shaped, three-arm nanostructure, fabricated from ferromagnetic (Ga,Mn)As layers. The effect, related to a rearrangement of magnetic domain walls between different pairs of arms in the structure, reveals as a dependence of zero-field resistance on the direction of previously applied magnetic field. This effect could allow designing devices with unique switching and memory properties.

7 pages, 3 figures

References in corpus (4)

• Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)As wires with nanoconstrictions
• Domain-wall resistance in ferromagnetic (Ga,Mn)As
• Influence of defects on the lattice constant of GaMnAs
• Electrical Transport Across an Individual Magnetic Domain Wall in (Ga,Mn)As Microdevices

Cited by in corpus (6)

• Dilute ferromagnetic semiconductors: Physics and spintronic structures
• Piezo-control of magnetic anisotropy in GaMnAs: Reversible manipulation of magnetization orientation and irreversible magnetization switching
• Magnetic properties of wurtzite (Ga,Mn)As
• Long Range Magnetic order stabilized by acceptors
• Effect of Misfit Strain in (Ga,Mn)(Bi,As) Epitaxial Layers on their Magnetic and Magneto-Transport Properties
• Magnetic and magneto-transport characterization of (Ga,Mn)(Bi,As) epitaxial layers