22 citations · 56 across the 5 of their papers we have counts for
3 papers · 1 filter
Van der Waals heteroepitaxy of air stable quasi-free standing silicene layers on CVD epitaxial graphene/6H-SiC
Zouhour Ben Jabra, Mathieu Abel, Filippo Fabbri +8
Graphene, consisting of an inert, thermally stable material with an atomically flat, dangling bond-free surface is by essence an ideal template layer for van der Waals heteroepitax…
Hydrogen-mediated CVD epitaxy of Graphene on SiC: growth mechanism and atomic configuration
Zouhour Ben Jabra, Isabelle Berbezier, Adrien Michon +7
Despite the large literature focused on the growth of graphene (Gr) on 6H-SiC(0001) by chemical vapour deposition (CVD), some important issues have not been solved and full wafer s…
Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy: effect of Ge concentration and biaxial stress
A. Portavoce, P. Gas, I. Berbezier +3
Si1-xGex/Si1-yGey/Si(100) heterostructures grown by Molecular Beam Epitaxy (MBE) were used in order to study B surface segregation during growth and B lattice diffusion. Ge concent…