22 citations · 56 across the 5 of their papers we have counts for
5 papers
Van der Waals heteroepitaxy of air stable quasi-free standing silicene layers on CVD epitaxial graphene/6H-SiC
Zouhour Ben Jabra, Mathieu Abel, Filippo Fabbri +8
Graphene, consisting of an inert, thermally stable material with an atomically flat, dangling bond-free surface is by essence an ideal template layer for van der Waals heteroepitax…
Hydrogen-mediated CVD epitaxy of Graphene on SiC: growth mechanism and atomic configuration
Zouhour Ben Jabra, Isabelle Berbezier, Adrien Michon +7
Despite the large literature focused on the growth of graphene (Gr) on 6H-SiC(0001) by chemical vapour deposition (CVD), some important issues have not been solved and full wafer s…
Role of Quantum Confinement in Luminescence Efficiency of Group IV Nanostructures
E. G. Barbagiovanni, D. J. Lockwood, N. L. Rowell +7
Experimental results obtained previously for the photoluminescence efficiency (PL) of Ge quantum dots (QDs) are theoretically studied. A - plot of PL ve…
Orientation dependence of the elastic instability on strained SiGe films
J. -N. Aqua, A. Gouyé, T. Auphan +3
At low strain, SiGe films on Si substrates undergo a continuous nucleationless morphological evolution known as the Asaro-Tiller-Grinfeld instability. We demonstrate experimentally…
Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy: effect of Ge concentration and biaxial stress
A. Portavoce, P. Gas, I. Berbezier +3
Si1-xGex/Si1-yGey/Si(100) heterostructures grown by Molecular Beam Epitaxy (MBE) were used in order to study B surface segregation during growth and B lattice diffusion. Ge concent…