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physics.app-ph2025

Intermediate Resistive State in Wafer-Scale MoS Memristors through Lateral Silver Filament Growth for Artificial Synapse Applications

Yuan Fa, Milan Buttberg, Ke Ran +17

Memristors based on two-dimensional materials (2DMs) have garnered significant attention due to their fast resistive switching (RS) behavior and atomic-level thickness, which enabl…

physics.app-ph2024

Dry Transfer Based on PMMA and Thermal Release Tape for Heterogeneous Integration of 2D-TMDC Layers

Amir Ghiami, Hleb Fiadziushkin, Tianyishan Sun +9

A reliable and scalable transfer of 2D-TMDCs (two-dimensional transition metal dichalcogenides) from the growth substrate to a target substrate with high reproducibility and yield…

physics.app-ph2024

Volatile MoS Memristors with Lateral Silver Ion Migration for Artificial Neuron Applications

Sofia Cruces, Mohit D. Ganeriwala, Jimin Lee +12

Layered two-dimensional (2D) semiconductors have shown enhanced ion migration capabilities along their van der Waals (vdW) gaps and on their surfaces. This effect can be employed f…

physics.app-ph2024

Tunable Doping and Mobility Enhancement in 2D Channel Field-Effect Transistors via Damage-Free Atomic Layer Deposition of AlOX Dielectrics

Ardeshir Esteki, Sarah Riazimehr, Agata Piacentini +14

Two-dimensional materials (2DMs) have been widely investigated because of their potential for heterogeneous integration with modern electronics. However, several major challenges r…

physics.app-ph2024

Multiparameter admittance spectroscopy for investigating defects in MoS thin film MOSFETs

Eros Reato, Ardeshir Esteki, Benny Ku +4

A method for assessing the quality of electronic material properties of thin-film metal oxide semiconductor field-effect transistors (MOSFETs) is presented. By investigating sample…