115 citations · 127 across the 2 of their papers we have counts for
2 papers
quant-ph2021★ 12 cited
Multi-photon multi-quantum transitions in the spin-3/2 silicon-vacancy centers of SiC
Harpreet Singh, Mario Alex Hollberg, Andrei N. Anisimov +2
Silicon vacancy centers in silicon carbide are promising candidates for storing and manipulating quantum information. Implementation of fast quantum gates is an essential requireme…
cond-mat.mtrl-sci2016★ 115 cited
Optical thermometry based on level anticrossing in silicon carbide
A. N. Anisimov, D. Simin, V. A. Soltamov +4
We report a giant thermal shift of MHz/K related to the excited-state zero-field splitting in the silicon vacancy centers in 4H silicon carbide. It is obtained from the ind…