3 papers
cond-mat.mtrl-sci2025
Calculations of pathways of precise P incorporation into chlorinated Si(100) surface
T. V. Pavlova
The precise incorporation of a phosphorus atom into a silicon surface is essential for the fabrication of nanoelectronic devices in which the active area is formed from single impu…
cond-mat.mtrl-sci2025
Surface diffusion of phosphorus on Si(100) after PBr3 adsorption
T. V. Pavlova, V. M. Shevlyuga
Phosphorus diffusion on a Si(100) surface was studied using scanning tunneling microscopy (STM) at temperatures of 77 and 300 K. The phosphorus source utilized was the PBr mole…
cond-mat.mtrl-sci2024
Enhancing the reactivity of Si(100)-Cl toward PBr3 by charging Si dangling bonds
T. V. Pavlova, V. M. Shevlyuga
The interaction of the PBr3 molecule with Si dangling bonds (DBs) on a chlorinated Si(100) surface was studied. The DBs were charged in a scanning tunneling microscope (STM) and th…