36 citations · 66 across the 4 of their papers we have counts for
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cond-mat.mtrl-sci2015
Layer-by-Layer Dielectric Breakdown of Hexagonal Boron Nitride
Y. Hattori, K. Watanabe, T. Taniguchi +1
Hexagonal boron nitride (BN) is widely used as a substrate and gate insulator for two-dimensional (2D) electronic devices. The studies on insulating properties and electrical relia…
cond-mat.mtrl-sci2015★ 16 cited
Atomic layer deposition of Y2O3 on h-BN for a gate stack in graphene FETs
N. Takahashi, K. Watanabe, T. Taniguchi +1
The combination of h-BN and high-k dielectrics is required for a top gate insulator in miniaturized graphene field-effect transistors because of the low dielectric constant of h-BN…