4 papers
Mapping the twist angle dependence of quasi-Brillouin zones in doubly aligned graphene/BN heterostructures
Jorge Vallejo Bustamante, Viet-Hung Nguyen, Liam S. Farrar +5
When monolayer graphene is crystallographically aligned to hexagonal boron nitride (BN), a moiré superlattice is formed, producing characteristic satellite Dirac peaks in the elec…
Robust quantum Hall resistance standard from uniform wafer-scale epitaxial graphene on SiC
François Couëdo, Chiara Mastropasqua, Aurélien Theret +3
We report high-precision resistance measurements on quantum Hall resistance devices fabricated from uniform epitaxial graphene grown by propane-hydrogen chemical vapor deposition o…
Twist-Angle-Controlled Anomalous Gating in Bilayer Graphene/BN Heterostructures
G. Maffione, L. S. Farrar, M. Kapfer +5
Anomalous gating effects-such as gate ineffectiveness and pronounced hysteresis-have been observed in graphene-based systems encapsulated in boron nitride (BN) and linked to a poss…
Impact of the angular alignment on the crystal field and intrinsic doping of bilayer graphene/BN heterostructures
L. S. Farrar, G. Maffione, V. -H. Nguyen +5
The ability to tune the energy gap in bilayer graphene makes it the perfect playground for the study of the effects of internal electric fields, such as the crystalline field, whic…