170 citations · 264 across the 4 of their papers we have counts for
4 papers
Manipulation of the electrical and memory properties of MoS field-effect transistors by highly charged ion irradiation
Stephan Sleziona, Aniello Pelella, Enver Faella +6
Field-effect transistors based on molybdenum disulfide (MoS) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hy…
Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanopillar arrays
Antonio Di Bartolomeo, Maurizio Passacantando, Gang Niu +4
We apply molecular beam epitaxy to grow GeSn-nanoparticles on top of Si-nanopillars patterned onto p-type Si wafers. We use X-ray photoelectron spectroscopy to confirm a metallic b…
Low-energy electron-irradiation effect on transport properties of graphene field effect transistor
F. Giubileo, A. Di Bartolomeo, N. Martucciello +4
We study the effects of low-energy electron beam irradiation up to 10 keV on graphene based field effect transistors. We fabricate metallic bilayer electrodes to contact mono- and…
Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device
Antonio Di Bartolomeo, Filippo Giubileo, Giuseppe Luongo +7
We demonstrate tunable Schottky barrier height and record photo-responsivity in a new-concept device made of a single-layer CVD graphene transferred onto a matrix of nanotips patte…