activity
19932026
most citedTemperature Dependence of Wavelength Selectable Zero-Phonon Emission from Single Defects in Hexagonal Boron Nitride

320 citations · 4.5k across the 79 of their papers we have counts for

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Showing 2004Show all

6 papers · 1 filter

cond-mat.mtrl-sci2004

Dynamical nuclear polarization and nuclear magnetic fields in semiconductor nanostructures

Ionel Tifrea, Michael E. Flatte

We investigate the dynamic nuclear polarization from the hyperfine interaction between nonequilibrium electronic spins and nuclear spins coupled to them in semiconductor nanostruct…

cond-mat.mes-hall2004

Spin Gunn Effect

Yunong Qi, Zhi-Gang Yu, Michael E. Flatté

We predict that the flow of unpolarized current in electron-doped GaAs and InP at room temperature is unstable at high electric fields to the dynamic formation of spin-polarized cu…

cond-mat.mes-hall2004

Teleportation of electronic many-qubit states via single photons

Michael N. Leuenberger, Michael E. Flatte, D. D. Awschalom

We propose a teleportation scheme that relies only on single-photon measurements and Faraday rotation, for teleportation of many-qubit entangled states stored in the electron spins…

cond-mat.mes-hall2004★ 11 cited

Electronic structures and electron spin decoherence in (001)-grown layered zincblende semiconductors

Wayne H. Lau, J. T. Olesberg, Michael E. Flatte'

Electronic structure calculations for layered zincblende semiconductors are described within a restricted basis formalism which naturally and non-perturbatively accomodates both cr…

cond-mat.supr-con2004★ 14 cited

Impurity induced low-energy resonances in Bi_2Sr_2CaCu_2O_{8+delta}

Jian-Ming Tang, Michael E. Flatte'

We study sharp low-energy resonance peaks in the local density of states (LDOS) induced by Zn impurities or possible Cu vacancies in superconducting Bi_2Sr_2CaCu_2O_{8+delta}. The…

cond-mat.mtrl-sci2004★ 191 cited

Spatial structure of an individual Mn acceptor in GaAs

A. M. Yakunin, A. Yu. Silov, P. M. Koenraad +5

The wave function of a hole bound to an individual Mn acceptor in GaAs is spatially mapped by scanning tunneling microscopy at room temperature and an anisotropic, cross-like shape…