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20012005
most citedEffects of annealing time on defect-controlled ferromagnetism in Ga1-xMnxAs

329 citations · 856 across the 12 of their papers we have counts for

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6 papers · 1 filter

cond-mat.mtrl-sci2005★ 6 cited

Fabrication and Characterization of Modulation-Doped ZnSe/(Zn,Cd)Se (110) Quantum Wells: A New System for Spin Coherence Studies

K. C. Ku, S. H. Chun. W. H. Wang, W. Fadgen +4

We describe the growth of modulation-doped ZnSe/(Zn,Cd)Se quantum wells on (110) GaAs substrates. Unlike the well-known protocol for the epitaxy of ZnSe-based quantum structures on…

cond-mat.mtrl-sci2005★ 19 cited

Exchange Biasing of the Ferromagnetic Semiconductor (Ga,Mn)As by MnO

K. F. Eid, M. B. Stone, O. Maksimov +6

We provide an overview of progress on the exchange biasing of a ferromagnetic semiconductor (Ga1-xMnxAs) by proximity to an antiferromagnetic oxide layer (MnO). We present a detail…

cond-mat.mtrl-sci2003★ 57 cited

Exchange Biasing of the Ferromagnetic Semiconductor Ga1-xMnxAs

K. F. Eid, M. B. Stone, K. C. Ku +4

We demonstrate the exchange coupling of a ferromagnetic semiconductor (Ga1-xMnxAs) with an overgrown antiferromagnet (MnO). Unlike most conventional exchange biased systems, the bl…

cond-mat.mtrl-sci2002★ 84 cited

Spin-polarized Tunneling in Hybrid Metal-Semiconductor Magnetic Tunnel Junctions

S. H. Chun, S. J. Potashnik, K. C. Ku +2

We demonstrate efficient spin-polarized tunneling between a ferromagnetic metal and a ferromagnetic semiconductor with highly mismatched conductivities. This is indicated by a larg…

cond-mat.mtrl-sci2001★ 329 cited

Effects of annealing time on defect-controlled ferromagnetism in Ga1-xMnxAs

S. J. Potashnik, K. C. Ku, S. H. Chun +3

We have studied the evolution of the magnetic, electronic, and structural properties of annealed epilayers of Ga1-xMnxAs grown by low temperature molecular beam epitaxy. Annealing…

cond-mat.mtrl-sci2001★ 35 cited

Two-Carrier Transport in Epitaxially Grown MnAs

J. J. Berry, S. J. Potashnik, S. H. Chun +3

Magneto-transport measurements of ferromagnetic MnAs epilayers grown by molecular beam epitaxy reveal the presence of both positive and negative charge carriers. Electrical transpo…