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cond-mat.mtrl-sci2008
Strain selectivity of SiGe wet chemical etchants
M. Stoffel, A. Malachias, T. Merdzhanova +6
We investigate the effect of strain on the etching rate of two SiGe wet etchants, namely NH4OH:H2O2 and H2O2. For both etchants, we found that there is no appreciable strain select…
cond-mat.mtrl-sci2004
Atomic ordering in self-assembled Ge:Si(001) islands observed by X-ray scattering
A. Malachias, T. U. Schulli, G. Medeiros-Ribeiro +4
X-ray diffuse scattering in the vicinity of a basis-forbidden (200) Bragg reflection was measured for a sample with uncapped self-assembled Ge islands epitaxially grown on Si(001).…