70 citations · 167 across the 9 of their papers we have counts for
5 papers · 1 filter
Effect of temperature and excitation power on down-conversion process in Tb3+/Yb3+-activated silica-hafnia glass-ceramic films
S. E. Amrani, M. Sun, S. Valdueza-Felip +4
Transparent glass ceramics, when activated by rare earth ions, are excellent photonic materials. Regarding photonic glass-ceramics based on silicates, hafnia and silica in a binary…
Low-to-mid Al content ( 0-0.56) AlInN layers deposited on Si(100) by radio-frequency sputtering
R. Blasco, S. Valdueza-Felip, D. Montero +3
Radio-frequency (RF) sputtering is a low-cost technique for the deposition of large-area single-phase AlInN on silicon layers with application in photovoltaic devices. Here, the ef…
Comparison of the material quality of AlxIn1-xN (x ~ 0-0.50) films deposited on Si (100) and (111) by reactive RF sputtering
M. Sun, R. Blasco, M. de la Mata +5
Here, we compare the material quality of AlxIn1-xN layers deposited on Si with different crystallographic orientations, (100) and (111), via radio-frequency (RF) sputtering. To mod…
P-i-n InGaN homojunctions (10-40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm
S. Valdueza-Felip, A. Ajay, L. Redaelli +6
We report the influence of the In mole fraction on the material and electrical characteristics of p-i-n InxGa1-xN homojunctions (x = 0.10-0.40) synthesized by plasma-assisted molec…
High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: growth conditions, strain relaxation and In incorporation kinetics
S. Valdueza-Felip, E. Bellet-Amalric, A. Núñez-Cascajero +7
We report the interplay between In incorporation and strain relaxation kinetics in high-In-content InxGa1-xN (x = 0.3) layers grown by plasma-assisted molecular-beam epitaxy. For I…