activity
20162025
most citedLow-to-mid Al content ( 0-0.56) AlInN layers deposited on Si(100) by radio-frequency sputtering

13 citations · 32 across the 5 of their papers we have counts for

collaborators

8 papers

cond-mat.mtrl-sci2025★ 6 cited

Effect of temperature and excitation power on down-conversion process in Tb3+/Yb3+-activated silica-hafnia glass-ceramic films

S. E. Amrani, M. Sun, S. Valdueza-Felip +4

Transparent glass ceramics, when activated by rare earth ions, are excellent photonic materials. Regarding photonic glass-ceramics based on silicates, hafnia and silica in a binary…

cond-mat.mtrl-sci2025★ 13 cited

Low-to-mid Al content ( 0-0.56) AlInN layers deposited on Si(100) by radio-frequency sputtering

R. Blasco, S. Valdueza-Felip, D. Montero +3

Radio-frequency (RF) sputtering is a low-cost technique for the deposition of large-area single-phase AlInN on silicon layers with application in photovoltaic devices. Here, the ef…

cond-mat.mtrl-sci2021★ 4 cited

Comparison of the material quality of AlxIn1-xN (x ~ 0-0.50) films deposited on Si (100) and (111) by reactive RF sputtering

M. Sun, R. Blasco, M. de la Mata +5

Here, we compare the material quality of AlxIn1-xN layers deposited on Si with different crystallographic orientations, (100) and (111), via radio-frequency (RF) sputtering. To mod…

physics.app-ph2019

Design of n-AlInN on p-silicon heterojunction solar cells

R. Blasco, F. B. Naranjo, S. Valdueza-Felip

Aluminum Indium Nitride (AlInN) alloys offer great potential for photovoltaic devices thanks to their wide direct bandgap energy that covers the solar spectrum from 0.7 eV (InN) to…

physics.app-ph2019★ 8 cited

High quality AlInN layers grown at low temperature (<300C) by radio-frequency sputtering

A Núñez-Cascajero, R. Blasco, S Valdueza-Felip +3

High-quality Al0.37In0.63N layers have been grown by reactive radio-frequency (RF) sputtering on sapphire, glass and Si (111) at low substrate temperature (from room temperature to…

physics.app-ph2018

Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by RF sputtering

S. Valdueza-Felip, A. Núñez-Cascajero, R. Blasco +8

We report the influence of the AlN interlayer thickness (0-15 nm) on the photovoltaic properties of Al0.37In0.63N on Si heterojunction solar cells deposited by radio frequency sput…