70 citations · 167 across the 9 of their papers we have counts for
9 papers
Effect of temperature and excitation power on down-conversion process in Tb3+/Yb3+-activated silica-hafnia glass-ceramic films
S. E. Amrani, M. Sun, S. Valdueza-Felip +4
Transparent glass ceramics, when activated by rare earth ions, are excellent photonic materials. Regarding photonic glass-ceramics based on silicates, hafnia and silica in a binary…
Low-to-mid Al content ( 0-0.56) AlInN layers deposited on Si(100) by radio-frequency sputtering
R. Blasco, S. Valdueza-Felip, D. Montero +3
Radio-frequency (RF) sputtering is a low-cost technique for the deposition of large-area single-phase AlInN on silicon layers with application in photovoltaic devices. Here, the ef…
Comparison of the material quality of AlxIn1-xN (x ~ 0-0.50) films deposited on Si (100) and (111) by reactive RF sputtering
M. Sun, R. Blasco, M. de la Mata +5
Here, we compare the material quality of AlxIn1-xN layers deposited on Si with different crystallographic orientations, (100) and (111), via radio-frequency (RF) sputtering. To mod…
Design of n-AlInN on p-silicon heterojunction solar cells
R. Blasco, F. B. Naranjo, S. Valdueza-Felip
Aluminum Indium Nitride (AlInN) alloys offer great potential for photovoltaic devices thanks to their wide direct bandgap energy that covers the solar spectrum from 0.7 eV (InN) to…
High quality AlInN layers grown at low temperature (<300C) by radio-frequency sputtering
A Núñez-Cascajero, R. Blasco, S Valdueza-Felip +3
High-quality Al0.37In0.63N layers have been grown by reactive radio-frequency (RF) sputtering on sapphire, glass and Si (111) at low substrate temperature (from room temperature to…
Influence of the AlN interlayer thickness on the photovoltaic properties of In-rich AlInN on Si heterojunctions deposited by RF sputtering
S. Valdueza-Felip, A. Núñez-Cascajero, R. Blasco +8
We report the influence of the AlN interlayer thickness (0-15 nm) on the photovoltaic properties of Al0.37In0.63N on Si heterojunction solar cells deposited by radio frequency sput…
P-i-n InGaN homojunctions (10-40% In) synthesized by plasma-assisted molecular beam epitaxy with extended photoresponse to 600 nm
S. Valdueza-Felip, A. Ajay, L. Redaelli +6
We report the influence of the In mole fraction on the material and electrical characteristics of p-i-n InxGa1-xN homojunctions (x = 0.10-0.40) synthesized by plasma-assisted molec…
Effect of the quantum well thickness on the performance of InGaN photovoltaic cells
L. Redaelli, A. Mukhtarova, S. Valdueza-Felip +7
We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In0.12Ga0.88N/GaN multiple quantum well solar cells. The band-to-ban…
High In-content InGaN layers synthesized by plasma-assisted molecular-beam epitaxy: growth conditions, strain relaxation and In incorporation kinetics
S. Valdueza-Felip, E. Bellet-Amalric, A. Núñez-Cascajero +7
We report the interplay between In incorporation and strain relaxation kinetics in high-In-content InxGa1-xN (x = 0.3) layers grown by plasma-assisted molecular-beam epitaxy. For I…