747 citations · 5k across the 52 of their papers we have counts for
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Single-shot measurement of triplet-singlet relaxation in a Si/SiGe double quantum dot
J. R. Prance, Zhan Shi, C. B. Simmons +8
We investigate the lifetime of two-electron spin states in a few-electron Si/SiGe double dot. At the transition between the (1,1) and (0,2) charge occupations, Pauli spin blockade…
A fast "hybrid" silicon double quantum dot qubit
Zhan Shi, C. B. Simmons, J. R. Prance +9
We propose a quantum dot qubit architecture that has an attractive combination of speed and fabrication simplicity. It consists of a double quantum dot with one electron in one dot…
Tunable singlet-triplet splitting in a few-electron Si/SiGe quantum dot
Zhan Shi, C. B. Simmons, J. R. Prance +6
We measure the excited-state spectrum of a Si/SiGe quantum dot as a function of in-plane magnetic field, and we identify the spin of the lowest three eigenstates in an effective tw…
Si/SiGe quantum dot with superconducting single-electron transistor charge sensor
Mingyun Yuan, Feng Pan, Zhen Yang +6
We report a robust process for fabrication of surface-gated Si/SiGe quantum dots (QDs) with an integrated superconducting single-electron transistor (S-SET) charge sensor. A combin…