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Relaxation mechanism of GaP grown on 001 Sisubstrates: influence of defects on the growth of AlGaPlayers on GaP/Si templates
Konstantinos Pantzas, Grégoire Beaudoin, Myriam Bailly +7
The mechanical stability of commercial GaP/Si templates during thermal an-nealing and subsequent MOCVD growth of GaP and AlGaP is investigated.Although the GaP layer of the templat…
Single InAsP/InP quantum dots as telecommunications-band photon sources
David Elvira, Richard Hostein, Fain Bruno +8
The optical properties of single InAsP/InP quantum dots are investigated by spectrally-resolved and time-resolved photoluminescence measurements as a function of excitation power.…
Time-Resolved characterization of InAsP/InP quantum dots emitting in the C-band telecommunication window
Richard Hostein, Adrien Michon, Gregoire Beaudoin +6
The dynamic response of InAsP quantum dots grown on InP(001) substrates by low-pressure Metalorganic Vapor Phase Epitaxy emitting around 1.55 m, is investigated by means of time…
Controlled light-matter coupling for a single quantum dot embedded in a pillar microcavity using far-field optical lithography
A. Dousse, L. Lanco, J. Suffczynski +7
Using far field optical lithography, a single quantum dot is positioned within a pillar microcavity with a 50 nm accuracy. The lithography is performed in-situ at 10 K while measur…
Polariton laser using single micropillar GaAs-GaAlAs semiconductor cavities
Daniele Bajoni, Pascale Senellart, Esther Wertz +4
Polariton lasing is demonstrated on the zero dimensional states of single GaAs/GaAlAs micropillar cavities. Under non resonant excitation, the measured polariton ground state occup…
Long-range ordering of III-V semiconductor nanostructures by shallowly buried dislocation networks
Jose Coelho, Gilles Patriarche, Frank Glas +2
We account for lateral orderings of III-V nanostructures resulting from a GaAs/InAs/InGaAs/GaAs sequence grown on GaAs by metallorganic vapour phase epitaxy at two different temper…