4 papers
First-Principles Investigation of Surface-Induced Effects on the Properties of Divacancy Qubits in 3C-SiC
Rosario G. Viglione, Giovanni Castorina, Gaetano Calogero +4
Neutral silicon-carbon divacancy (VV) in cubic silicon carbide (3C-SiC) is a promising class of point defects for quantum technologies based on active crystalline cent…
Tailoring nuclear spins order with defects: a Quantum Technology CAD study
Gaetano Calogero, Ioannis Deretzis, Giuseppe Fisicaro +3
The full design of relevant systems for quantum applications, ranging from quantum simulation to sensing, is presented using a combination of atomistic methods. A prototypical syst…
Impact of impurities on leakage current induced by High-Energy Density Pulsed Laser Annealing in Si diodes
Richard Monflier, Richard Daubriac, Mahmoud Haned +9
For semiconductor device fabrication, Pulsed Laser Annealing (PLA) offers significant advantages over conventional thermal processes. Notably, it can provide ultrafast (~ns) and hi…
Stability and decoherence analysis of the silicon vacancy in 3C-SiC
Tommaso Fazio, Giuseppe Fisicaro, Ioannis Deretzis +2
We study the silicon vacancy in 3C SiC as a color center of interest in the field of Quantum Technologies, focusing on its magnetic interaction with the SiC nuclear spin bath conta…