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physics.ins-det2018★ 14 cited
Development of Integration-Type Silicon-On-Insulator Monolithic Pixel Detectors by Using a Float Zone Silicon
S. Mitsui, Y. Arai, T. Miyoshi +1
In this paper, we describe the development of monolithic pixel detectors by using a Silicon-on-Insulator (SOI) technology for X-ray and charged particle applications. The detectors…
physics.ins-det2010★ 4 cited
Irradiation test on FD-SOI Readout ASIC of Pair-monitor
Yutaro Sato, Hirokazu Ikeda, Akiya Miyamoto +3
We fabricated a readout ASIC with the fully depleted silicon-on-insulator (FD-SOI) technology for the pair-monitor. The pair-monitor is a silicon pixel device that measures the bea…
physics.ins-det2009★ 75 cited
High-speed charge-to-time converter ASIC for the Super-Kamiokande detector
H. Nishino, K. Awai, Y. Hayato +7
A new application-specific integrated circuit (ASIC), the high-speed charge-to-time converter (QTC) IWATSU CLC101, provides three channels, each consisting of preamplifier, discrim…