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Charge-Carrier Screening in Single-Layer Graphene
David A. Siegel, William Regan, Alexei V. Fedorov +2
The effect of charge-carrier screening on the transport properties of a neutral graphene sheet is studied by directly probing its electronic structure. We find that the Fermi veloc…
Fermi velocity engineering in graphene by substrate modification
Choongyu Hwang, David A. Siegel, Sung-Kwan Mo +5
The Fermi velocity is one of the key concepts in the study of a material, as it bears information on a variety of fundamental properties. Upon increasing demand on the device appli…
Self-doping effects in epitaxially grown graphene
D. A. Siegel, S. Y. Zhou, F. El Gabaly +3
Self-doping in graphene has been studied by examining single-layer epitaxially grown graphene samples with differing characteristic lateral terrace widths. Low energy electron micr…