5 papers
Topological Valley Transport in Bilayer Graphene Induced by Interlayer Sliding
Jie Pan, Huanhuan Wang, Lin Zou +10
Interlayer sliding, together with twist angle, is a crucial parameter that defines the atomic registry and thus determines the properties of two-dimensional (2D) material homobilay…
Bias voltage controlled inversions of tunneling magnetoresistance in van der Waals heterostructures Fe3GaTe2/hBN/Fe3GaTe2
Lihao Zhang, Miao He, Xiaoyu Wang +8
We report the bias voltage controlled inversions of tunneling magnetoresistance (TMR) in magnetic tunnel junctions composed of Fe3GaTe2 electrodes and hBN tunneling barrier, observ…
Inducing Berry Curvature Dipole in Multilayer Graphene through Inhomogeneous Interlayer Sliding
Jie Pan, Huanhuan Wang, Lin Zou +5
Breaking lattice symmetry is crucial for generating a nonzero Berry curvature. While manipulating twisting angles between adjacent layers has successfully broken lattice symmetry t…
Bias Voltage Driven Tunneling Magnetoresistance Polarity Reversal in 2D Stripy Antiferromagnet CrOCl
Lihao Zhang, Xiaoyu Wang, Qi Li +6
Atomically thin materials with coupled magnetic and electric polarization are critical for developing energy-efficient and high-density spintronic devices, yet they remain scarce d…
Magnetoresistance oscillations in vertical junctions of 2D antiferromagnetic semiconductor CrPS
Pengyuan Shi, Xiaoyu Wang, Lihao Zhang +13
Magnetoresistance (MR) oscillations serve as a hallmark of intrinsic quantum behavior, traditionally observed only in conducting systems. Here we report the discovery of MR oscilla…