activity
19982017
most citedNoise in Al single electron transistors of stacked design

73 citations · 171 across the 8 of their papers we have counts for

collaborators

8 papers

cond-mat.mes-hall2017★ 9 cited

Electron counting capacitance standard and quantum metrology triangle experiments at PTB

H Scherer, J Schurr, F J Ahlers

This paper summarizes the final results of the electron counting capacitance standard experiment at the Physikalisch-Technische Bundesanstalt (PTB) achieved since the publication o…

cond-mat.mes-hall2004

Steps towards a capacitance standard based on single-electron counting at PTB

H. Scherer, S. V. Lotkhov, G. -D. Willenberg +1

A capacitance standard based on the definition of capacitance C = Ne/U is realized when a capacitor is charged with a known number N of electrons (e is the elementary charge) and t…

cond-mat.mes-hall2004★ 36 cited

Single-charge devices with ultrasmall Nb/AlOx/Nb trilayer Josephson junctions

R. Dolata, H. Scherer, A. B. Zorin +1

Josephson junction transistors and 50-junction arrays with linear junction dimensions from 200 nm down to 70 nm were fabricated from standard Nb/AlOx/Nb trilayers. The fabrication…

cond-mat.mes-hall2001★ 21 cited

Single electron transistors with high quality superconducting niobium islands

R. Dolata, H. Scherer, A. B. Zorin +1

Deep submicron Al-AlOx-Nb tunnel junctions and single electron transistors with niobium islands were fabricated by electron beam gun shadow evaporation. Using stencil masks consist…

cond-mat.mes-hall2001★ 11 cited

The effect of thermal annealing on the properties of Al-AlOx-Al single electron tunneling transistors

H. Scherer, Th. Weimann, A. B. Zorin +1

The effect of thermal annealing on the properties of Al-AlOx-Al single electron tunneling transistors is reported. After treatment of the devices by annealing processes in forming…

cond-mat.mes-hall1999★ 16 cited

Characterization of All-Chromium Tunnel Junctions and Single Electron Tunneling Devices Fabricated by Direct-Writing Multilayer Technique

H. Scherer, Th. Weimann, P. Hinze +3

We report about the fabrication and analysis of the properties of Cr/CrO_x/Cr tunnel junctions and SET transistors, prepared by different variants of direct-writing multilayer tech…

cond-mat.mes-hall1999★ 5 cited

Superconducting Electrometer Based on the Resistively Shunted Bloch Transistor

S. V. Lotkhov, H. Zangerle, A. B. Zorin +3

We have fabricated the Bloch transistor shunted on-chip by a small-sized Cr resistor with Rs about 1 kOhm. The Bloch transistor normally consists of two small Josephson junctions c…

cond-mat.mes-hall1998★ 73 cited

Noise in Al single electron transistors of stacked design

V. A. Krupenin, D. E. Presnov, M. N. Savvateev +3

We have fabricated and examined several Al single electron transistors whose small islands were positioned on top of a counter electrode and hence did not come into contact with a…