activity
20132026
most citedGate-tunable band structure of the LaAlO-SrTiO interface

60 citations · 273 across the 18 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

7 papers · 1 filter

cond-mat.mes-hall2026

Interfering trajectories in a ballistic Andreev cavity

Pankaj Mandal, Marcel Kaschper, Fernando Dominguez +9

The conventional description of transport through the interface between a normal conductor and a superconductor reduces the system to a one-dimensional problem treating Andreev ref…

cond-mat.mes-hall2025

Self-Consistent Model for Gate Control of Narrow-, Broken-, and Inverted-Gap (Topological) Heterostructures

Maximilian Hofer, Christopher Fuchs, Moritz Siebert +8

Even small electrostatic potentials can dramatically influence the band structure of narrow-, broken-, and inverted-gap materials. A quantitative understanding often necessitates a…

cond-mat.mes-hall2024★ 11 cited

Period-doubling in the phase dynamics of a shunted HgTe quantum well Josephson junction

Wei Liu, Stanislau U. Piatrusha, Xianhu Liang +7

The fractional AC Josephson effect is a discerning property of topological superconductivity in hybrid Josephson junctions. Recent experimental observations of missing odd Shapiro…

cond-mat.mes-hall2022★ 6 cited

Finite field transport response of a dilute magnetic topological insulator based Josephson junction

Pankaj Mandal, Nicolai Taufertshöfer, Lukas Lunczer +3

Hybrid samples combining superconductors with magnetic topological insulators are a promising platform for exploring exotic new transport physics. We examine a Josephson junction o…

cond-mat.mes-hall2020★ 5 cited

Inhomogeneous superconductivity and quasilinear magnetoresistance at amorphous LaTiO3/SrTiO3 interfaces

N. Lebedev, M. Stehno, A. Rana +4

We have studied the transport properties of LaTiO3/SrTiO3 (LTO/STO) heterostructures. In spite of 2D growth observed in reflection high energy electron diffraction, Transmission El…

cond-mat.mes-hall2016★ 39 cited

Gate-tunable transport properties of in-situ capped BiTe topological insulator thin films

Prosper Ngabonziza, Martin P. Stehno, Hiroaki Myoren +3

Combining the ability to prepare high-quality, intrinsic BiTe topological insulator thin films of low carrier density with in-situ protective capping, we demonstrate a pron…