116 citations · 297 across the 11 of their papers we have counts for
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Site-Selective Yttrium Substitution in Ti3AlC2 Enables Interlayer Engineering and Li Transport in Ti3C2Tx cathodes for High-Power Energy Storage
Tetiana Boichuk, Andrii Boichuk, Mahesh Eledath Changarath +5
In this work, we introduce a precursor-level strategy by substitutionally doping the Ti3AlC2 MAX precursor with a small amount of Yttrium during top-down MAX preparation. This allo…
Angle-resolved photoemission study and first principles calculation of the electronic structure of GaTe
J. F. Sanchez-Royo, J. Pellicer-Porres, A. Segura +5
The electronic band structure of GaTe has been calculated by numerical atomic orbitals density-functional theory, in the local density approximation. In addition, the valence-band…
Electronic properties and Fermi surface of Ag(111) films deposited onto H-passivated Si(111)-(1x1) surfaces
A. Arranz, J. F. Sanchez-Royo, J. Avila +3
Silver films were deposited at room temperature onto H-passivated Si(111) surfaces. Their electronic properties have been analyzed by angle-resolved photoelectron spectroscopy. Sub…
Two-domains bulklike Fermi surface of Ag films deposited onto Si(111)-(7x7)
J. F. Sanchez-Royo, J. Avila, V. Perez-Dieste +2
Thick metallic silver films have been deposited onto Si(111)-(7x7) substrates at room temperature. Their electronic properties have been studied by using angle resolved photoelectr…
Investigation of acceptor levels and hole scattering mechanisms in p-gallium selenide by means of transport measurements under pressure
Daniel Errandonea, J. F. Sánchez-Royo, A. Segura +2
The effect of pressure on acceptor levels and hole scattering mechanisms in p-GaSe is investigated through Hall effect and resistivity measurements under quasi-hydrostatic conditio…