116 citations · 297 across the 11 of their papers we have counts for
12 papers
Site-Selective Yttrium Substitution in Ti3AlC2 Enables Interlayer Engineering and Li Transport in Ti3C2Tx cathodes for High-Power Energy Storage
Tetiana Boichuk, Andrii Boichuk, Mahesh Eledath Changarath +5
In this work, we introduce a precursor-level strategy by substitutionally doping the Ti3AlC2 MAX precursor with a small amount of Yttrium during top-down MAX preparation. This allo…
Revealing giant exciton fine-structure splitting in 2D perovskites using van der Waals passivation
Rodolfo Canet-Albiach, Marie Krecmarova, José Bosch Bailach +8
The study of two-dimensional (2D) van der Waals materials has been an active field of research in the development of new optoelectronics and photonic applications over the last dec…
Donor-acceptor discrete optical emission in 2D perovskites
Setatira Gorji, Marie Krecmarova, Alejandro Molina +12
Two-dimensional (2D) van der Waals nanomaterials have attracted considerable attention for potential use in photonic and optoelectronic applications in the nanoscale, due to their…
Out-of-plane emission of trions in monolayer WSe2 revealed by whispering gallery modes of dielectric microresonators
D. Andres-Penares, M. K. Habil, A. Molina-Sánchez +3
The manipulation of light emitted by two-dimensional semiconductors grounds forthcoming technologies in the field of on-chip communications. However, these technologies require fro…
Out-of-plane orientation of luminescent excitons in atomically thin indium selenide flakes
Mauro Brotons-Gisbert, Raphaël Proux, Raphaël Picard +5
Van der Waals materials offer a wide range of atomic layers with unique properties that can be easily combined to engineer novel electronic and photonic devices. A missing ingredie…
Resonance fluorescence and laser spectroscopy of three-dimensionally confined excitons in monolayer WSe
S. Kumar, M. Brotons-Gisbert, R. Al-Khuzheyri +4
Resonant optical excitation of few-level quantum systems enables coherent quantum control, resonance fluorescence, and direct characterization of dephasing mechanisms. Experimental…
Angle-resolved photoemission study and first principles calculation of the electronic structure of GaTe
J. F. Sanchez-Royo, J. Pellicer-Porres, A. Segura +5
The electronic band structure of GaTe has been calculated by numerical atomic orbitals density-functional theory, in the local density approximation. In addition, the valence-band…
Quantum-well states in ultrathin Ag(111) films deposited onto H-passivated Si(111)-(1x1) surfaces
A. Arranz, J. F. Sanchez-Royo, J. Avila +3
Ag(111) films were deposited at room temperature onto H-passivated Si(111)-(1x1) substrates, and subsequently annealed at 300 C. An abrupt non-reactive Ag/Si interface is formed, a…
Electronic properties and Fermi surface of Ag(111) films deposited onto H-passivated Si(111)-(1x1) surfaces
A. Arranz, J. F. Sanchez-Royo, J. Avila +3
Silver films were deposited at room temperature onto H-passivated Si(111) surfaces. Their electronic properties have been analyzed by angle-resolved photoelectron spectroscopy. Sub…
Two-domains bulklike Fermi surface of Ag films deposited onto Si(111)-(7x7)
J. F. Sanchez-Royo, J. Avila, V. Perez-Dieste +2
Thick metallic silver films have been deposited onto Si(111)-(7x7) substrates at room temperature. Their electronic properties have been studied by using angle resolved photoelectr…
Investigation of acceptor levels and hole scattering mechanisms in p-gallium selenide by means of transport measurements under pressure
Daniel Errandonea, J. F. Sánchez-Royo, A. Segura +2
The effect of pressure on acceptor levels and hole scattering mechanisms in p-GaSe is investigated through Hall effect and resistivity measurements under quasi-hydrostatic conditio…
Investigation of conduction band structure, electron scattering mechanisms and phase transitions in indium selenide by means of transport measurements under pressure
D. Errandonea, A. Segura, J. F. Sánchez-Royo +4
In this work we report on Hall effect, resistivity and thermopower measurements in n-type indium selenide at room temperature under either hydrostatic and quasi-hydrostatic pressur…