High-Mobility Holes in Dual-Gated WSe${}_2$ Field-Effect Transistors

Hema C. P. Movva, Amritesh Rai, Sangwoo Kang +6

We demonstrate dual-gated $p$-type field-effect transistors (FETs) based on few-layer tungsten diselenide (WSe${}_2$) using high work-function platinum source/drain contacts, and a h…