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20132017
most citedEvolution of Asymmetric Raman line-shape from nano-structures

65 citations · 214 across the 11 of their papers we have counts for

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7 papers · 1 filter

cond-mat.mes-hall2016

Comment on Half metallicity along the edge of zigzag boron nitride nanoribbons (Phys. Rev. B 78, 205415 (2008)

Hari Mohan Rai, Rajesh Kumar, Pankaj R. Sagdeo +2

We would like to comment that the prediction of Half-mtallicity in only B edge H-passivated zigzag boron nitride nanoribbons (ZBNNR-BH), by Zheng et al.1, is not correct as their i…

cond-mat.mes-hall2016★ 30 cited

Role of Metal Nanoparticles on porosification of silicon by metal induced etching (MIE)

Shailendra K. Saxena, Priyanka Yogi, Pooja Yadav +6

Porosification of silicon (Si) by metal induced etching (MIE) process have been studies here to understand the etching mechanism. The etching mechanism has been discussed on the ba…

cond-mat.mes-hall2016★ 21 cited

Half-metallicity in Armchair Boron Nitride Nanoribbons: A First-Principles Study

Hari Mohan Rai, Shailendra K. Saxena, Vikash Mishra +5

Using density functional theory, we predict half-metallicity in edge hydrogenated armchair boron nitride nanoribbons (ABNNRs). The predicted spin polarization is analyzed in detail…

cond-mat.mes-hall2015★ 53 cited

Interplay between Phonon Confinement and Fano Effect on Raman line shape for semiconductor nanostructures: Analytical study

Priyanka Yogi, Shailendra K. Saxena, Suryakant Mishra +7

Theoretical Raman line shape functions have been studied to take care of quantum confinement effect and Fano effect individually and jointly. The characteristics of various Raman l…

cond-mat.mes-hall2015★ 19 cited

Intrinsic Half-metallicity in Edge Fluorinated Armchair Boron Nitride Nanoribbons

Hari Mohan Rai, Shailendra K Saxena, Vikash Mishra +5

We predict intrinsic half-metallicity in armchair boron nitride nanoribbons (ABNNRs) via edge fluorination. The stability, electronic and magnetic properties of bare and edge fluor…

cond-mat.mes-hall2014

Comparison of porous silicon prepared using metal-induced etching (MIE) and laser-induced etching (LIE)

Shailendra K. Saxena, Vivek Kumar, Hari M. Rai +6

Porous silicon (p-Si), prepared by two routes (metal induced etching (MIE) and laser induced etching (LIE)) have been studied by comparing the observed surface morphologies using S…

cond-mat.mes-hall2013★ 65 cited

Evolution of Asymmetric Raman line-shape from nano-structures

Rajesh Kumar, Gayatri Sahu, Shailendra K. Saxena +2

A step-by-step evolution of an asymmetric Raman line-shape function from a Lorentzian line-shape is presented here for low dimensional semiconductors. The evolution reported here i…