activity
20132017
most citedEvolution of Asymmetric Raman line-shape from nano-structures

65 citations · 214 across the 11 of their papers we have counts for

collaborators

11 papers

cond-mat.mtrl-sci2017

Observation, Evidence and Origin of Room Temperature Magnetodielectric Effect in Mn doped LaGaO3

Hari Mohan Rai, Shailendra K. Saxena, Vikash Mishra +2

We report an observation of room temperature magnetodielectric (RTMD) effect in Mn doped LaGaO3. Results of frequency dependent magnetoresistance (FDMR) measurements discards the p…

cond-mat.str-el2016★ 5 cited

Metastable behavior of Urbach tail states in BaTiO3 across phase transition

Vikash Mishra, Archna Sagdeo, Kamal Warshi +4

The temperature dependent diffuse reflectance spectroscopy measurements were carried out on the polycrystalline samples of BaTiO3 across the tetragonal to cubic structural phase tr…

cond-mat.mes-hall2016

Comment on Half metallicity along the edge of zigzag boron nitride nanoribbons (Phys. Rev. B 78, 205415 (2008)

Hari Mohan Rai, Rajesh Kumar, Pankaj R. Sagdeo +2

We would like to comment that the prediction of Half-mtallicity in only B edge H-passivated zigzag boron nitride nanoribbons (ZBNNR-BH), by Zheng et al.1, is not correct as their i…

cond-mat.str-el2016★ 1 cited

Optical bandgap and bowing parameter for Fe doped LaGaO3

P. R. Sagdeo, Preetam Singh, Hari Mohan Rai +3

The polycrystalline samples of LaGa1-xFexO3 have been prepared by standard solid state reaction route. The phase purity of the prepared samples is confirmed by powder xray diffract…

cond-mat.mes-hall2016★ 30 cited

Role of Metal Nanoparticles on porosification of silicon by metal induced etching (MIE)

Shailendra K. Saxena, Priyanka Yogi, Pooja Yadav +6

Porosification of silicon (Si) by metal induced etching (MIE) process have been studies here to understand the etching mechanism. The etching mechanism has been discussed on the ba…

cond-mat.mes-hall2016★ 21 cited

Half-metallicity in Armchair Boron Nitride Nanoribbons: A First-Principles Study

Hari Mohan Rai, Shailendra K. Saxena, Vikash Mishra +5

Using density functional theory, we predict half-metallicity in edge hydrogenated armchair boron nitride nanoribbons (ABNNRs). The predicted spin polarization is analyzed in detail…

cond-mat.mes-hall2015★ 53 cited

Interplay between Phonon Confinement and Fano Effect on Raman line shape for semiconductor nanostructures: Analytical study

Priyanka Yogi, Shailendra K. Saxena, Suryakant Mishra +7

Theoretical Raman line shape functions have been studied to take care of quantum confinement effect and Fano effect individually and jointly. The characteristics of various Raman l…

cond-mat.str-el2015★ 20 cited

Room temperature magnetodielectric studies on Mn doped LaGaO3

Hari Mohan Rai, Ravikiran Late, Shailendra Saxena +4

The polycrystalline samples of LaGa1-xMnxO3 (0<x<0.3) has been prepared by solid state reaction route. The phase purity of these samples has been confirmed by powder x-ray diffract…

cond-mat.mes-hall2015★ 19 cited

Intrinsic Half-metallicity in Edge Fluorinated Armchair Boron Nitride Nanoribbons

Hari Mohan Rai, Shailendra K Saxena, Vikash Mishra +5

We predict intrinsic half-metallicity in armchair boron nitride nanoribbons (ABNNRs) via edge fluorination. The stability, electronic and magnetic properties of bare and edge fluor…

cond-mat.mes-hall2014

Comparison of porous silicon prepared using metal-induced etching (MIE) and laser-induced etching (LIE)

Shailendra K. Saxena, Vivek Kumar, Hari M. Rai +6

Porous silicon (p-Si), prepared by two routes (metal induced etching (MIE) and laser induced etching (LIE)) have been studied by comparing the observed surface morphologies using S…

cond-mat.mes-hall2013★ 65 cited

Evolution of Asymmetric Raman line-shape from nano-structures

Rajesh Kumar, Gayatri Sahu, Shailendra K. Saxena +2

A step-by-step evolution of an asymmetric Raman line-shape function from a Lorentzian line-shape is presented here for low dimensional semiconductors. The evolution reported here i…