Theory of the carbon vacancy in $4H$-SiC: crystal field and pseudo Jahn-Teller effects

José Coutinho, Vitor J. B. Torres, Kamel Demmouche +1

The carbon vacancy in $4H$-SiC is a powerful minority carrier recombination center and a major cause of degradation of SiC-based devices. Despite the extensiveness of the literatur…